Samsung Begins Mass Production of First 512GB eUFS 3.0
Samsung announced that it has begun mass producing the industry’s first 512-gigabyte embedded Universal Flash Storage 3.0 for next-generation mobile devices. The new memory delivers twice the speed of the previous eUFS storage.
“Beginning mass production of our eUFS 3.0 lineup gives us a great advantage in the next-generation mobile market to which we are bringing a memory read speed that was before only available on ultra-slim laptops,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “As we expand our eUFS 3.0 offerings, including a 1- TB version later this year, we expect to play a major role in accelerating momentum within the premium mobile market.”
512GB eUFS 3.0 stacks eight of the company’s fifth-generation 512-gigabit V-NAND die and integrates a high-performance controller. At 2,100 MB/s, the new eUFS doubles the sequential read rate of Samsung’s latest eUFS memory which was announced in January. The new solution’s blazing read speed is four times faster than that of a SATA SSDs and 20 times faster than a typical microSD card. In addition, the sequential write speed also has been improved by 50 percent to 410MB/s, equivalent to that of a SATA SSD.
With the significant gains in random read and writes that are more than 630 times faster than general microSD cards (100 IOPS), a number of complex applications can be simultaneously run, while achieving enhanced responsiveness. Following the 512GB eUFS 3.0 as well as a 128GB version that are both launching this month, Samsung plans to produce 1TB and 256GB models in the second half of the year.