Samsung Debuts Semiconductor Innovations

Samsung Debuts Semiconductor Innovations

Foto: Samsung

Samsung announced several additions to its semiconductor ecosystem that encompass next-generation technologies in foundry as well as NAND flash, SSD and DRAM.

Together, these developments mark a giant step forward for Samsung’s semiconductor business. Unveiled additions at annual Samsung Tech Day include 7nm EUV process node from Samsung’s Foundry Business, SmartSSD, QLC-SSD for enterprise and datacenters and 256-gigabyte 3DS RDIMM, based on 10nm-class 16-gigabit DDR4 DRAM.

“Bringing 7nm EUV into production is an incredible achievement. Also, the announcements of SmartSSD and 256GB 3DS RDIMM represent performance and capacity breakthroughs that will continue to push compute boundaries. Together, these additions to Samsung’s comprehensive technology ecosystem will power the next generation of datacenters, high-performance computing, enterprise, AI and emerging applications,” said JS Choi, President, Samsung Semiconductor.

A range of solutions will enable the development of upcoming machine learning and AI technologies. The Tech Day AI display highlighted data transfer speeds of 16Gb GDDR6 (64GB/s), ultra-low latency of Z-SSD and industry-leading performance of Aquabolt, which is the highest of any DRAM-based memory solution currently in the market. Together, these solutions help Samsung’s enterprise and datacenter clients open new doors to application learning and create the next wave of AI advancements. These solutions will enable not just faster speeds and higher performance but also improved efficiency for its enterprise clients.

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