Micron and Intel Announced First 4bits/cell 3D NAND Technology

Micron and Intel Announced First 4bits/cell 3D NAND Technology
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Micron and Intel have announced production and shipment of the industry’s first 4bits/cell 3D NAND technology. Leveraging a proven 64-layer structure, the new 4bits/cell NAND technology achieves 1 terabit (Tb) density per die, the world’s highest-density flash memory.

The companies also announced development progress on the third-generation 96-tier 3D NAND structure, providing a 50 percent increase in layers. These advancements in the cell structure continue the companies’ leadership in producing the world’s highest Gb/mm2 areal density.

Both NAND technology advancements utilize CMOS under the array (CuA) technology to reduce die sizes and deliver improved performance when compared to competitive approaches. By leveraging four planes vs the competitors’ two planes, the new Intel and Micron NAND flash memory can write and read more cells in parallel, which delivers faster throughput and higher bandwidth at the system level.

The new 64-layer 4bits/cell NAND technology enables denser storage in a smaller space, bringing significant cost savings for read-intensive cloud workloads. It is also well-suited for consumer and client computing applications, providing cost-optimized storage solutions.